Exclusive

Publication

Byline

Location

US Patent Issued to BOE TECHNOLOGY GROUP on June 23 for "Metal oxide thin film transistor, array substrate and display device" (Chinese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,653, issued on June 23, was assigned to BOE TECHNOLOGY GROUP Co. LTD. (Beijing). "Metal oxide thin film transistor, array substrate and dis... Read More


US Patent Issued to LG Electronics on June 23 for "Graphene-based biosensor" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,654, issued on June 23, was assigned to LG Electronics Inc. (Seoul, South Korea). "Graphene-based biosensor" was invented by Jinwoo Sung (S... Read More


US Patent Issued to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) on June 23 for "Method for manufacturing tellurium-based semiconductor device, tellurium-based semiconductor device manufactured thereby, and thin film transistor" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,655, issued on June 23, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (Seoul, South Korea). "Met... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Transistor device with multi-layer channel structure" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,656, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Transistor device with multi-layer ... Read More


US Patent Issued to Shanghai Huali Integrated Circuit on June 23 for "Super flash and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,657, issued on June 23, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai). "Super flash and method for manufacturing same"... Read More


US Patent Issued to Wolfspeed on June 23 for "Buried shield structures for power semiconductor devices and related fabrication methods" (North Carolina Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,658, issued on June 23, was assigned to Wolfspeed Inc. (Durham, N.C.). "Buried shield structures for power semiconductor devices and relate... Read More


US Patent Issued to NANYA TECHNOLOGY on June 23 for "Semiconductor memory structure having drain stressor, source stressor and buried gate and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,659, issued on June 23, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor memory structure having drain stre... Read More


US Patent Issued to Intel on June 23 for "Transistor structures having a doping layer on transition metal dichalcogenide layers outside of the channel region" (Oregon Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,660, issued on June 23, was assigned to Intel Corp. (Santa Clara, Calif.). "Transistor structures having a doping layer on transition metal... Read More


US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device having gate insulating layer in trench and on upper surface of substrate, channel layer on gate insulating layer, and spaced-apart source and drain electrodes on channel layer" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,661, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device having gate insulati... Read More


US Patent Issued to POWER MASTER SEMICONDUCTOR on June 23 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,662, issued on June 23, was assigned to POWER MASTER SEMICONDUCTOR Co. LTD. (Bucheon-si, South Korea). "Semiconductor device" was invented ... Read More